Crystallization behavior of sputter-deposited amorphous Ge2Sb2Te5 thin films

Journal of Applied Physics

Volumn 86, Issue 2, 1999, Pages 774-778

  Jeong, Tae H ^a   Kim, Myong R ^a   Seo, Hun ^a   Kim, Sang J ^b   Kim, Sang Y ^b  

^a LG   (South Korea)

^b Ajou University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS FILMS; ANNEALING; CRYSTALLIZATION; DIFFERENTIAL SCANNING CALORIMETRY; GERMANIUM COMPOUNDS; LIGHT REFLECTION; REACTION KINETICS; REFRACTIVE INDEX; SPUTTER DEPOSITION; THERMAL EFFECTS; TRANSMISSION ELECTRON MICROSCOPY; X RAY CRYSTALLOGRAPHY;

JOHNSON-MEHL-AVRAMI EQUATION;

OPTICAL FILMS;

EID: 0032620157     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.370803     Document Type: Article

References (4)

1. J. Gonzalez-Hemandez, B. S. Chao, D. Strand, S. R. Ovshinsky, D. Pawlik, and P. Gasiorowski, Appl. Phys. Commun. 11, 557 (1992).
2. N. Yamada, E. Ohno, K. Nishiuchi, N. Akahira, and M. Takao, J. Appl. Phys. 69, 2849 (1991).
3. J. W. Christian, Theory of Transformations in Metals and Alloys, 2nd ed. (Pergamon, New York, 1975).
4. H. E. Kissinger, Anal. Chem. 29, 1702 (1957).