Crystallization-induced stress in thin phase change films of different thicknesses

Applied Physics Letters

Volumn 93, Issue 22, 2008, Pages

  Guo, Qiang ^a,b   Li, Minghua ^c   Li, Yi ^a,b   Shi, Luping ^c   Chong, Tow Chong ^c   Kalb, Johannes A ^a,d,e   Thompson, Carl V ^a,d  

^a SINGAPORE MIT ALLIANCE   (Singapore)

^b NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^c DATA STORAGE INSTITUTE   (Singapore)

^d Massachusetts Institute of Technology Cambridge   (United States)

^e INTEL CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLIZATION; GERMANIUM; NANOCRYSTALLINE ALLOYS; TELLURIUM COMPOUNDS;

CAPPING LAYERS; DEVICE PERFORMANCES; DIELECTRIC CAPPING LAYERS; HIGH STRESSES; IN PHASE; INDUCED STRESSES; MICRO CANTILEVERS; PHASE CHANGE FILMS; PHASE CHANGE MEMORY CELLS;

PHASE CHANGE MEMORY;

EID: 57349195159     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3040314     Document Type: Article

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