Characterization of amorphous phases of Ge2Sb2Te5 phase-change optical recording material on their crystallization behavior

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 8 B, 1999, Pages 4775-4779

  Park, Jeongwoo ^a   Kim, Myong R ^a   Choi, Woo S ^a   Seo, Hun ^a   Yeon, Cheong ^a  

^a LG   (South Korea)

Author keywords

Amorphous phase; Crystallization time; DSC; Laser annealing; Phase change optical disc; TEM

Indexed keywords

ACTIVATION ENERGY; AMORPHOUS MATERIALS; ANNEALING; CRYSTAL ATOMIC STRUCTURE; CRYSTALLIZATION; DIFFERENTIAL SCANNING CALORIMETRY; LASER APPLICATIONS; OPTICAL DISK STORAGE; PHASE TRANSITIONS; REACTION KINETICS; TEMPERATURE; TRANSMISSION ELECTRON MICROSCOPY;

AMORPHOUS PHASES; CRYSTALLIZATION TIME; LASER ANNEALING; PHASE CHANGE OPTICAL DISC;

GERMANIUM ALLOYS;

EID: 0033175337     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.4775     Document Type: Article

References (5)

1. M. Okada, M. Ogawa, M. Kubogata, S. Ohkubo and M. Itoh: Jpn. J. Appl. Phys. 37 (1998) 2516.
2. N. Yamada: Proc. SPIE 3109 (1997) 28.
3. J. H. Coombs, A. P. J. M. Jongenelis, W. van Es-Spiekman and B. A. J. Jacobs: J. Appl. Phys. 78 (1995) 4906.
4. K. F. Kelton, A. L. Greer and C. V. Thompson: J. Chem. Phys. 79 (1983) 6261.
5. R. B. Iverson and R. Reif: J. Appl. Phys. 62 (1987) 1675.