Enhancement of ultraviolet detecting by coupling the photoconductive behavior of GaN nanowires and p-n junction

Optics Express

Volumn 20, Issue 18, 2012, Pages 20748-20753

  Liu, Nishuang ^a   Tian, Weiwei ^a   Zhang, Xianghui ^a   Su, Jun ^a   Zhang, Qi ^a   Gao, Yihua ^a  

^a HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

METALLIC FILMS; NANOWIRES; SEMICONDUCTOR JUNCTIONS; ULTRAVIOLET RADIATION;

BAND DIAGRAMS; CONTRAST RATIO; FILM STRUCTURE; GAN NANOWIRES; HIGH SENSITIVITY; P-N JUNCTION; PHOTOGENERATED ELECTRONS; PHOTORESPONSES; SHORT RESPONSE TIME; ULTRAVIOLET LIGHT IRRADIATION; ULTRAVIOLET RESPONSE; ZERO BIAS;

GALLIUM NITRIDE;

GALLIUM; GALLIUM NITRIDE;

ARTICLE; CHEMISTRY; ELECTRIC CONDUCTIVITY; EQUIPMENT DESIGN; EQUIPMENT FAILURE ANALYSIS; INSTRUMENTATION; PHOTOMETRY; RADIATION EXPOSURE; SEMICONDUCTOR; ULTRAVIOLET RADIATION;

ELECTRIC CONDUCTIVITY; EQUIPMENT DESIGN; EQUIPMENT FAILURE ANALYSIS; GALLIUM; PHOTOMETRY; SEMICONDUCTORS; ULTRAVIOLET RAYS;

EID: 84865770856     PISSN: None     EISSN: 10944087     Source Type: Journal    
DOI: 10.1364/OE.20.020748     Document Type: Article

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