The influence of Ga source and substrate position on the growth of low dimensional GaN wires by chemical vapour deposition

Applied Surface Science

Volumn 257, Issue 23, 2011, Pages 10052-10055

  Low, L L ^a   Yam, F K ^a   Beh, K P ^a   Hassan, Z ^a  

^a SCHOOL OF PHYSICS   (Malaysia)

Author keywords

Chemical vapour deposition; GaN; Nanowires; Vapour liquid solid mechanism

Indexed keywords

GALLIUM; GALLIUM NITRIDE; III-V SEMICONDUCTORS; NANOWIRES; NICKEL COMPOUNDS; SUBSTRATES; WIRE; X RAY DIFFRACTION;

CHEMICAL VAPOUR DEPOSITION; COMPARATIVE STUDIES; GASEOUS REACTANTS; INTERNAL STRAINS; OPTICAL CHARACTERISTICS; PHOTOLUMINESCENCE MEASUREMENTS; SUBSTRATE POSITIONS; VAPOUR-LIQUID-SOLID MECHANISMS;

CHEMICAL VAPOR DEPOSITION;

EID: 80051786589     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2011.06.138     Document Type: Article

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