Low-voltage and high-responsivity germanium bipolar phototransistor for optical detections in the near-infrared regime

IEEE Electron Device Letters

Volumn 29, Issue 10, 2008, Pages 1124-1127

  Ang, Kah Wee ^a   Yu, Ming Bin ^a   Lo, Guo Qiang ^a   Kwong, Dim Lee ^a  

^a INSTITUTE OF MICROELECTRONICS   (Singapore)

Author keywords

Germanium (Ge); Near infrared; Phototransistor

Indexed keywords

CRYSTAL GROWTH; OPTOELECTRONIC DEVICES; PHOTOTRANSISTORS;

CURRENT GAINS; GERMANIUM (GE); LOW TEMPERATURES; LOW VOLTAGES; NEAR-INFRARED; OPTICAL RESPONSES; OPTICAL-; PHOTON WAVELENGTH; PHOTOTRANSISTOR; RESPONSIVITY;

GERMANIUM;

EID: 54849362400     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2008.2004469     Document Type: Article

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