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Applied Physics Letters

Volumn 100, Issue 4, 2012, Pages

N-ZnO:N/p-Si nanowire photodiode prepared by atomic layer deposition

(7) Kang, Hyemin a Park, Jusang a Choi, Taejin a Jung, Hanearl a Lee, Kwang H a Im, Seongil a Kim, Hyungjun a

a Yonsei University (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER SEPARATION; CORE SHELL STRUCTURE; CORE-SHELL; ELECTROLESS; ETCHING METHOD; FULL DEPLETION; I-V MEASUREMENTS; NITROGEN-DOPING; PLANAR DEVICES; PLANAR DIODE; PN JUNCTION DIODES; RESPONSIVITY; ZNO;

ATOMIC LAYER DEPOSITION; NANOWIRES; SEMICONDUCTOR JUNCTIONS; ZINC OXIDE;

SHELLS (STRUCTURES);

EID: 84863071674 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3679078 Document Type: Article

Times cited : (43)

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