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Volumn 247, Issue 7, 2010, Pages 1703-1706

Layer thickness dependent carrier recombination rate in HVPE GaN

Author keywords

Carrier recombination; III V Semiconductors; Transient grating spectroscopy

Indexed keywords


EID: 77954591981     PISSN: 03701972     EISSN: 15213951     Source Type: Journal    
DOI: 10.1002/pssb.200983532     Document Type: Article
Times cited : (12)

References (14)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.