Thermal characterisation of AlGaN/GaN HEMTs grown on silicon and sapphire substrates based on pulsed I-V measurements

EPJ Applied Physics

Volumn 22, Issue 2, 2003, Pages 77-82

  Aubry, R ^a   Jacquet, J C ^a   Dessertenne, B ^a   Chartier, E ^a   Adam, D ^a   Cordier, Y ^b   Semond, F ^b   Massies, J ^b   DiForte Poisson, M A ^a   Romann, A ^a   Delage, S L ^a  

^a THALES RESEARCH AND TECHNOLOGY   (France)

^b CRHEA CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRON MOBILITY; GALLIUM NITRIDE; HEAT RESISTANCE; SAPPHIRE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR GROWTH; SILICON; SUBSTRATES; THERMAL CONDUCTIVITY; THERMAL EFFECTS;

ALUMINIUM GALLIUM NITRIDE; BUFFER LAYER; MEAN CHANNEL TEMPERATURE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0037903282     PISSN: 12860042     EISSN: None     Source Type: Journal    
DOI: 10.1051/epjap:2003026     Document Type: Article

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