Seamless On-wafer integration of Si(100) MOSFETs and GaN HEMTs

IEEE Electron Device Letters

Volumn 30, Issue 10, 2009, Pages 1015-1017

  Chung, Jinwook W ^a   Lee, Jae Kyu ^a   Piner, Edwin L ^b   Palacios, Tomás ^a  

^a Massachusetts Institute of Technology Cambridge   (United States)

^b NITRONEX CORPORATION   (United States)

Author keywords

GaN; Heterogeneous integration; High electron mobility transistor (HEMT); Metal oxide semiconductor fieldeffect transistor (MOSFET); Si(100); Virtual substrate

Indexed keywords

HETEROGENEOUS INTEGRATION; METAL-OXIDE-SEMICONDUCTOR FIELDEFFECT TRANSISTORS; MOS-FET; SI(1 0 0); VIRTUAL SUBSTRATES;

DIELECTRIC DEVICES; ELECTRON MOBILITY; EPILAYERS; FABRICATION; GALLIUM ALLOYS; GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; INTEGRATED CIRCUITS; MOSFET DEVICES; SEMICONDUCTING GALLIUM; SEMICONDUCTING SILICON COMPOUNDS; SILICON WAFERS; SUBSTRATES; THERMODYNAMIC STABILITY; TRANSISTORS; WAFER BONDING;

SEMICONDUCTING SILICON;

EID: 72049097414     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2009.2027914     Document Type: Article

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