Band offset measurements of the GaN/dielectric interfaces

Journal of Applied Physics

Volumn 112, Issue 2, 2012, Pages

  Coan, Mary R ^a   Woo, Jung Hwan ^a   Johnson, Derek ^a   Gatabi, Iman Rezanezhad ^a   Harris, H Rusty ^a  

^a Department of Electrical and Computer Engineering   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND OFFSETS; DIELECTRIC INTERFACE; INTERFACE ELECTRONICS; INTERFACIAL LAYER; POST-DEPOSITION ANNEAL;

ATOMIC LAYER DEPOSITION; GALLIUM NITRIDE; HAFNIUM OXIDES; PHOTOELECTRON SPECTROSCOPY;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 84865519139     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4737583     Document Type: Article

References (24)

1. G. Li, T. Zimmermann, Y. Cao, C. Lain, X. Xing, R. Wang, P. Fay, H. G. Xing, and D. Jena, (2010).
2. C. Yong, Z. Yugang, K. M. Lau, and K. J. Chen, IEEE Trans. Electron Devices, 53 (9), 2207-2215 (2006). 10.1109/TED.2006.881054
3. S. Guha, V. K. Paruchuri, M. Copel, V. Narayanan, Y. Y. Wang, P. E. Batson, N. A. Bojarczuk, B. Linder, and B. Doris, Appl. Phys. Lett. 90 (9), 092902 (2007). 10.1063/1.2709642
4. K. Matocha, T. P. Chow, and R. J. Gutmann, IEEE Trans. Electron Devices, 52 (1), 6-10 (2005). 10.1109/TED.2004.841355
5. S. Sugiura, Y. Hayashi, S. Kishimoto, T. Mizutani, M. Kuroda, T. Ueda, and T. Tanaka, Solid State Electron 54, 79-83 (2010). 10.1016/j.sse.2009.10.007
6. Y. C. Chang, H. C. Chiu, Y. J. Lee, M. L. Huang, K. Y. Lee, M. Hong, Y. N. Chiu, J. Kwo, and Y. H. Wang, Appl. Phys. Lett. 90 (23), 232904 (2007). 10.1063/1.2746057
7. D. Shahrjerdi, D. I. Garcia-Gutierrez, T. Akyol, S. R. Bank, E. Tutuc, J. C. Lee, and S. K. Banerjee, Appl. Phys. Lett. 91 (19), 193503 (2007). 10.1063/1.2806190
8. P. Sivasubramani, T. J. Park, B. E. Coss, A. Lucero, J. Huang, B. Brennan, Y. Cao, D. Jena, H. Xing, R. M. Wallace, and J. Kim, Phys. Status Solidi (RRL) 6 (1), 22-24 (2012). 10.1002/pssr.201105417
9. T. E. Cook, C. C. Fulton, W. J. Mecouch, R. F. Davis, G. Lucovsky, and R. J. Nemanich, J. Appl. Phys. 94 (11), 7155-7158 (2003). 10.1063/1.1625579
10. J. J. Uhlrich, L. C. Grabow, M. Mavrikakis, and T. F. Kuech, J. Electron. Mater. 37 (4), 439-447 (2008). 10.1007/s11664-007-0348-5
11. K. A. Rickert, A. B. Ellis, F. J. Himpsel, J. Sun, and T. F. Kuech, Appl. Phys. Lett. 80 (2), 204-206 (2002). 10.1063/1.1430024
12. C. R. Brundle, C. A. Evans, and S. Wilson, Encyclopedia of Materials Characterization: Surfaces, Interfaces, Thin Films (Butterworth-Heinemann, Manning, Boston, Greenwich, CT, 1992).
13. S. W. King, J. P. Barnak, M. D. Bremser, K. M. Tracy, C. Ronning, R. F. Davis, and R. J. Nemanich, J. Appl. Phys. 84 (9), 5248-5260 (1998). 10.1063/1.368814
14. T. Paskova, D. A. Hanser, and K. R. Evans, Proc. IEEE 98 (7), 1324-1338 (2010). 10.1109/JPROC.2009.2030699
15. CasaXPS, Casa Software Ltd. (2009).
16. J. R. Waldrop and R. W. Grant, Appl. Phys. Lett. 68 (20), 2879-2881 (1996). 10.1063/1.116355
17. M. E. Levinshtein, S. L. Rumyantsev, and M. Shur, Properties of Advanced Semiconductor Materials: GaN, AlN, InN, BN, SiC, SiGe (Wiley, New York, 2001).
18. Q. Z. Liu and S. S. Lau, Solid-State Electron. 42 (5), 677-691 (1998). 10.1016/S0038-1101(98)00099-9
19. NIST-XPS-Team, NIST X-ray Photoelectron Spectroscopy Database, Version 3.5 (National Institute of Standards and Technology, Gaithersburg, MD, 2003).
20. E. Martinez, C. Leroux, N. Benedetto, C. Gaumer, M. Charbonnier, C. Licitra, C. Guedj, F. Fillot, and S. Lhostis, ECS Trans. 16 (5), 161-169 (2008). 10.1149/1.2981598
21. N. V. Nguyen, O. A. Kirillov, W. Jiang, W. Wang, J. S. Suehle, P. D. Ye, Y. Xuan, N. Goel, K.-W. Choi, W. Tsai, and S. Sayan, Appl. Phys. Lett. 93 (8), 082105 (2008). 10.1063/1.2976676
22. S.-M. Oh, H.-W. You, K.-S. Kim, Y.-H. Lee, and W.-J. Cho, Curr. Appl. Phys. 10 (1, Supplement), e18-e21 (2010). 10.1016/j.cap.2009.12.005
23. J. Ren, B. Li, J.-G. Zheng, and J. Liu, Solid-State Electron. 67 (1), 23-26 (2012). 10.1016/j.sse.2011.07.016
24. Y. C. Chang, M. L. Huang, Y. H. Chang, Y. J. Lee, H. C. Chiu, J. Kwo, and M. Hong, Microelectron. Eng. 88 (7), 1207-1210 (2011). 10.1016/j.mee.2011.03. 098