Electrical and chemical properties of the Hfo2vsio 2vsi stack: Impact of HfO2 thickness and thermal budget

ECS Transactions

Volumn 16, Issue 5, 2009, Pages 161-169

  Martinez, E ^a   Leroux, C ^a   Benedetto, N ^a   Gaumer, C ^b   Charbonnier, M ^a   Licitra, C ^a   Guedj, C ^a   Fillot, F ^a   Lhostis, S ^b  

^a CEA LETI   (France)

^b STMICROELECTRONICS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC DEVICES; DIELECTRIC MATERIALS; ELECTRON AFFINITY; ELECTRONIC PROPERTIES; GATE DIELECTRICS; HAFNIUM OXIDES; HIGH-K DIELECTRIC; MOLECULAR ORBITALS; SILICA; SILICON; ULTRAVIOLET PHOTOELECTRON SPECTROSCOPY;

BARRIER HEIGHTS; CORE LEVEL SHIFTS; DIELECTRIC THICKNESS; DIPOLE STRENGTHS; ELECTRICAL MEASUREMENT; HIGH-TEMPERATURE ANNEAL; INTERFACIAL DIPOLES; INTERFACIAL LAYER;

BUDGET CONTROL;

EID: 63149126227     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.2981598     Document Type: Conference Paper

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