SCOPUS 정보 검색 플랫폼

Solid-State Electronics

Volumn 67, Issue 1, 2012, Pages 23-26

High-density NiSi nanocrystals embedded in Al2O 3/SiO2 double-barrier for robust retention of nonvolatile memory

(4) Ren, Jingjian a Li, Bei a Zheng, Jian Guo b Liu, Jianlin a

a University of California Riverside (United States)

b University of California Irvine (United States)

Author keywords

Al2O3 SiO2 double barrier; Nanocrystal memory; NiSi; Vapor solid solid growth

Indexed keywords

DOUBLE BARRIERS; DOUBLE-BARRIER STRUCTURES; HIGH DENSITY; HIGH TEMPERATURE; MEMORY DEVICE; MEMORY WINDOW; METAL OXIDE SEMICONDUCTOR; NANOCRYSTAL MEMORY; NISI; NON-VOLATILE MEMORIES; ROOM TEMPERATURE; VAPOR-SOLID-SOLID GROWTH;

ALUMINUM; GAS SOURCE MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR STORAGE; VAPORS;

NANOCRYSTALS;

EID: 80455173908 PISSN: 00381101 EISSN: None Source Type: Journal
DOI: 10.1016/j.sse.2011.07.016 Document Type: Article

Times cited : (11)

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