Room temperature writing of electrically conductive and insulating zones in silicon by nanoindentation

Applied Physics Letters

Volumn 98, Issue 5, 2011, Pages

  Ruffell, S ^a   Sears, K ^a   Bradby, J E ^a   Williams, J S ^a  

^a AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

DIAMOND CUBIC PHASE; ELECTRICAL PROPERTY; ELECTRICALLY CONDUCTIVE; HIGH-TEMPERATURE PROCESSING; MASK LESS; NEW APPLICATIONS; ROOM TEMPERATURE; SILICON DEVICES; SILICON SUBSTRATES;

ELECTRIC PROPERTIES; HIGH TEMPERATURE APPLICATIONS; METASTABLE PHASES; NANOINDENTATION;

SILICON;

EID: 79951501530     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3549191     Document Type: Article

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