Electronic structural details of donor-vacancy complexes in Si-doped Ge and Ge-doped Si

Thin Solid Films

Volumn 518, Issue 9, 2010, Pages 2381-2385

  Coutinho, J ^a   Castro, F ^a   Torres, V J B ^a   Carvalho, A ^b   Barroso, M ^a   Briddon, P R ^c  

^a UNIVERSITY OF AVEIRO   (Portugal)

^b EPFL   (Switzerland)

^c NEWCASTLE UNIVERSITY   (United Kingdom)

Author keywords

Donor; Germanium; Silicon; Vacancy

Indexed keywords

DONOR; DOPED SILICON; GE ATOM; GERMANIUM CLUSTERS; JAHN TELLER EFFECT; LINEAR COMBINATION OF ATOMIC ORBITALS; SI ATOMS; SI-GE ALLOYS; STRUCTURAL DETAILS; VACANCY COMPLEXES;

ATOMS; ELECTRON AFFINITY; ELECTRONIC STRUCTURE; GERMANIUM; GERMANIUM ALLOYS; QUANTUM CHEMISTRY; SILICON;

SILICON ALLOYS;

EID: 76049101338     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2009.09.168     Document Type: Article

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