Variations of high-pressure thermoelectric and mechanical properties of Si single crystals under doping with N and P-T pre-treatment

Materials Science and Engineering: A

Volumn 462, Issue 1-2, 2007, Pages 347-350

  Shchennikov, Vsevolod V ^a   Ovsyannikov, Sergey V ^b   Shchennikov, Vladimir V ^b   Shaidarova, Nadezhda A ^b   Misiuk, Andrzej ^c   Smirnov, Sergey V ^a   Yang, Deren ^d  

^a INSTITUTE OF ENGINEERING SCIENCE   (Russian Federation)

^b INSTITUTE OF METAL PHYSICS   (Russian Federation)

^c ukasiewicz Research Network Institute of Microelectronics and Photonics   (Poland)

^d ZHEJIANG UNIVERSITY   (China)

Author keywords

High pressure; Mechanical properties; Microindentation; Nitrogen doped Si; Phase transitions; Thermoelectric power (Seebeck coefficient)

Indexed keywords

CRYSTAL GROWTH FROM MELT; INDENTATION; PHASE TRANSITIONS; SEEBECK COEFFICIENT; SEMICONDUCTOR DOPING; SINGLE CRYSTALS; THERMOELECTRIC POWER;

MICROINDENTATION; RESIDUAL INTERSTITIAL OXYGEN; TRANSITION PRESSURE;

SEMICONDUCTING SILICON;

CRYSTAL GROWTH FROM MELT; INDENTATION; PHASE TRANSITIONS; SEEBECK COEFFICIENT; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SINGLE CRYSTALS; THERMOELECTRIC POWER;

EID: 34247592596     PISSN: 09215093     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.msea.2006.05.176     Document Type: Article

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