Effect of annealing under stress on defect structure of Si-Ge

Materials Science and Engineering: B

Volumn 154-155, Issue 1-3, 2008, Pages 137-140

  Misiuk, A ^a   Abrosimov, N V ^b   Romanowski, P ^c   Bak Misiuk, J ^c   Wnuk, A ^a   Surma, B ^a   Wierzchowski, W ^a   Wieteska, K ^d   Graeff, W ^e   Prujszczyk, M ^a  

^a ukasiewicz Research Network Institute of Microelectronics and Photonics   (Poland)

^b LEIBNIZ INSTITUTE FOR CRYSTAL GROWTH   (Germany)

^c INSTITUTE OF PHYSICS   (Poland)

^d INSTITUTE OF ATOMIC ENERGY   (Poland)

^e DESY   (Germany)

Author keywords

Annealing; Defect structure; Silicon germanium; Stress

Indexed keywords

ANNEALING; GERMANIUM; INFRARED SPECTROSCOPY; SI-GE ALLOYS; SILICON; X RAY DIFFRACTION ANALYSIS;

ANNEALING; AR PRESSURES; DEFECTS STRUCTURE; EFFECT OF ANNEALING; HIGH RESOLUTION X-RAY DIFFRACTOMETRY; INFRARED SPECTROMETRY; INTERSTITIAL OXYGEN CONCENTRATION; SI/GE; SILICON GERMANIUMS (SIGE); SYNCHROTRON TOPOGRAPHY;

OXYGEN;

EID: 56949091076     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2008.08.012     Document Type: Article

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