Effect of hydrogen implantation on semiconductor-metal transition and high-pressure thermopower in Si

Materials Science and Engineering: A

Volumn 462, Issue 1-2, 2007, Pages 343-346

  Ovsyannikov, Sergey V ^a   Shchennikov, Vladimir V ^a   Antonova, Irina V ^b   Shchennikov, Vsevolod V ^c   Ponosov, Yuri S ^a  

^a INSTITUTE OF METAL PHYSICS   (Russian Federation)

^b INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

^c INSTITUTE OF ENGINEERING SCIENCE   (Russian Federation)

Author keywords

High pressure; Phase transitions; Raman scattering; Si; Thermoelectric power (Seebeck coefficient)

Indexed keywords

AMORPHOUS SILICON; CRYSTAL GROWTH FROM MELT; HYDROGEN; NANOCRYSTALLINE SILICON; PHASE TRANSITIONS; SEEBECK COEFFICIENT; SILICON WAFERS; SINGLE CRYSTALS; THERMOELECTRIC POWER;

HYDROGEN IMPLANTATION; THERMOPOWER VALUES;

ION IMPLANTATION;

AMORPHOUS SILICON; CRYSTAL GROWTH FROM MELT; HYDROGEN; ION IMPLANTATION; NANOCRYSTALLINE SILICON; PHASE TRANSITIONS; SEEBECK COEFFICIENT; SILICON WAFERS; SINGLE CRYSTALS; THERMOELECTRIC POWER;

EID: 34247557204     PISSN: 09215093     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.msea.2006.04.158     Document Type: Article

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