Large positive magnetoresistive effect in silicon induced by the space-charge effect

Nature

Volumn 457, Issue 7233, 2009, Pages 1112-1115

  Delmo, Michael P ^a   Yamamoto, Shinpei ^b   Kasai, Shinya ^a   Ono, Teruo ^a   Kobayashi, Kensuke ^a  

^a KYOTO UNIVERSITY   (Japan)

^b KYOTO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

METAL; SILICON;

ELECTRIC FIELD; ELECTRON; MAGNETIC FIELD; SILICON; SUBSTRATE; TEMPERATURE EFFECT;

ARTICLE; CONDUCTANCE; DEVICE; ELECTRIC FIELD; ELECTRIC POTENTIAL; ELECTRON; HYBRID; LINEAR ENERGY TRANSFER; MAGNETIC FIELD; MAGNETIC STIMULATION; MAGNETISM; MAGNETORESISTANCE; MECHANICAL PROBE; PRIORITY JOURNAL; ROOM TEMPERATURE; SEMICONDUCTOR;

EID: 61349127747     PISSN: 00280836     EISSN: 14764687     Source Type: Journal    
DOI: 10.1038/nature07711     Document Type: Article

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