The impact of Ge codoping on the enhancement of photovoltaic characteristics of B-doped Czochralski grown Si crystal

Journal of Applied Physics

Volumn 111, Issue 4, 2012, Pages

  Arivanandhan, Mukannan ^a   Gotoh, Raira ^b   Watahiki, Tatsuro ^c   Fujiwara, Kozo ^b   Hayakawa, Yasuhiro ^a   Uda, Satoshi ^b   Konagai, Makoto ^c  

^a SHIZUOKA UNIVERSITY   (Japan)

^b TOHOKU UNIVERSITY   (Japan)

^c TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AS-GROWN; CO-DOPED; CO-DOPING; CZOCHRALSKI; DEFECT FORMATION; FLOW PATTERN DEFECTS; GE CONCENTRATIONS; GE-DOPING; INTERSTITIAL OXYGEN; LIGHT-INDUCED DEGRADATION; LOW CONCENTRATIONS; MICRO-DEFECTS; MINORITY CARRIER LIFETIMES; PHOTOVOLTAIC CHARACTERISTICS; SI CRYSTALS;

DEFECT DENSITY; DOPING (ADDITIVES); GERMANIUM; METAL CASTINGS; PHOTOVOLTAIC EFFECTS; SLOW LIGHT;

SILICON;

EID: 84857824401     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3687935     Document Type: Article

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