Impact of SF6 plasma treatment on performance of AlGaN/GaN HEMT

Vacuum

Volumn 84, Issue 1, 2009, Pages 235-237

  Vanko, G ^a   Lalinsky T ^a   Haščík, Š ^a   Ryger I ^a   Mozolová, Ž ^a   Skriniarova J ^b   Tomaska M ^b   Kostic I ^c   Vincze, A ^d  

^a INSTITUTE OF ELECTRICAL ENGINEERING   (Slovakia)

^b SLOVAK UNIVERSITY OF TECHNOLOGY   (Slovakia)

^c INSTITUTE OF CHEMISTRY   (Slovakia)

^d INTERNATIONAL LASER CENTER   (Slovakia)

Author keywords

AlGaN GaN heterostructure; HEMT's; Plasma etching

Indexed keywords

ALGAN; ALGAN/GAN; ALGAN/GAN HEMTS; ALGAN/GAN HETEROSTRUCTURE; ALGAN/GAN HETEROSTRUCTURES; DEPLETION MODES; ENHANCEMENT MODES; GATE ETCHING; HEMT'S; IN-SITU; PHOTORESIST MASK; PLASMA TREATMENT; RF DISCHARGE; SURFACE PASSIVATION;

ELECTRIC DISCHARGES; ELECTRIC POTENTIAL; ELECTRON MOBILITY; FIELD EFFECT TRANSISTORS; GALLIUM NITRIDE; PASSIVATION; PLASMA APPLICATIONS; PLASMA ETCHING; PLASMAS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 69249212137     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.vacuum.2009.04.032     Document Type: Article

References (8)

1. Buniatyan V.V., and Aroutiounian V.M. J Phys D: Appl Phys 40 (2007) 6355
2. Song D., Liu J., Cheng Z., Tang W.C.W., Lau K.M., and Chen K.V. IEEE Electron Device Lett 28 (2007) 189
3. Koudymov A., Shur M.S., and Simin G. IEEE Electron Device Lett 28 (2007) 332
4. Higashiwaki M., Mimura T., and Matsui T. IEEE Electron Device Lett 27 (2006) 719
5. Ando Y., Okamoto Y., Miyamoto, Nakayama T., Inoue T., and Kuzuhara M. IEEE Electron Device Lett 24 (2003) 289
6. Shen L., Palacios T., Poblenz C., Corrion A., Chakraborty A., Fichtenbaum N., et al. IEEE Electron Device Lett 27 (2006) 214
7. Chu R., Shen L., Fichtenbaum N., Brown D., Keller S., and Mishra U.K. IEEE Electron Device Lett 29 (2008) 297
8. Vanko G., Lalinský T., Mozolová Z., Liday J., Vogrinčič P., Vincze A., et al. Vacuum 82 (2007) 193