Improved electrical characteristics of Al2O3/InP structure by combination of sulfur passivation and forming gas annealing

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 38, Issue 12 B, 1999, Pages

  Morikita, Shinya ^a   Motegi, Tomoyuki ^a   Ikoma, Hideaki ^a  

^a TOKYO UNIVERSITY OF SCIENCE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINA; ANNEALING; ARGON; CAPACITANCE; ELECTRIC POTENTIAL; EVAPORATION; OXIDATION; OXYGEN; PASSIVATION; PLASMA APPLICATIONS; SEMICONDUCTING INDIUM PHOSPHIDE; VACUUM APPLICATIONS;

CAPACITANCE-VOLTAGE CHARACTERISTICS;

CAPACITORS;

EID: 0033332380     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.l1512     Document Type: Article

References (14)