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Volumn 157, Issue 3, 2010, Pages

Effects of fluorine incorporation on the electrical properties of atomic-layer-deposited Al2 O3 gate dielectric on InP substrate

(7) Chen, Yen Ting a Zhao, Han a Yum, Jung Hwan a Wang, Yanzhen a Xue, Fei a Zhou, Fei a Lee, Jack C a

a The University of Texas at Austin (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITED; ELECTRICAL CHARACTERIZATION; ELECTRICAL PROPERTY; EXPERIMENTAL INVESTIGATIONS; INP; INP SUBSTRATES; METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR; OPTIMUM CONDITIONS; OXIDE FIXED CHARGE; PLASMA TREATMENT; RADIO FREQUENCY POWER; RF-POWER;

ELECTRIC PROPERTIES; FIELD EFFECT TRANSISTORS; FLUORINE; GATE DIELECTRICS; GATES (TRANSISTOR); MOSFET DEVICES; PLASMA APPLICATIONS; ATOMIC LAYER DEPOSITION; MOS DEVICES;

ALUMINUM;

EID: 76349118593 PISSN: 00134651 EISSN: None Source Type: Journal
DOI: 10.1149/1.3273197 Document Type: Article

Times cited : (11)

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