Effect of postdeposition anneals on the Fermi level response of HfO 2/In0.53Ga0.47 As gate stacks

Journal of Applied Physics

Volumn 108, Issue 3, 2010, Pages

  Hwang, Yoontae ^a   Engel Herbert, Roman ^a   Rudawski, Nicholas G ^a   Stemmer, Susanne ^a  

^a University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRICAL CHARACTERISTIC; FORMING GAS; GATE STACKS; GATE VOLTAGES; INTERFACE TRAP DENSITY; LARGE BAND; METAL-OXIDE-SEMICONDUCTOR CAPACITORS; MID-GAP INTERFACES; OXIDE CAPACITANCE; POST DEPOSITION ANNEALING; POST-DEPOSITION; TERMAN METHODS;

ANNEALING; BENDING (FORMING); CHARGE COUPLED DEVICES; FERMI LEVEL; GATES (TRANSISTOR); HAFNIUM COMPOUNDS; METALLIC COMPOUNDS; MOS DEVICES; NITROGEN; PHASE INTERFACES;

GATE DIELECTRICS;

EID: 77955896094     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3465524     Document Type: Article

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