Thermal robustness and improved electrical properties of ultrathin germanium oxynitride gate dielectric

Japanese Journal of Applied Physics

Volumn 50, Issue 1, 2011, Pages

  Kutsuki, Katsuhiro ^a   Hideshima, Iori ^a   Okamoto, Gaku ^a   Hosoi, Takuji ^a   Shimura, Takayoshi ^a   Watanabe, Heiji ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BULK DEFECTS; DECOMPOSITION TEMPERATURE; ELECTRICAL MEASUREMENT; ELECTRICAL PROPERTY; FABRICATION PROCESS; GE(100); GERMANIUM OXYNITRIDE; INSULATING PROPERTIES; INTERFACE STATE DENSITY; OXYNITRIDES; PLASMA NITRIDATION; THERMAL OXIDES; THERMAL TREATMENT; ULTRA-THIN; ULTRATHIN GATE DIELECTRICS;

DIELECTRIC MATERIALS; ELECTRIC PROPERTIES; GATES (TRANSISTOR); GERMANIUM; NITRIDES;

GATE DIELECTRICS;

EID: 79951488440     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.50.010106     Document Type: Article

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