Beneficial effect of La on band offsets in Ge/high-κ insulator structures with GeO2 and La2O3 interlayers

Applied Physics Letters

Volumn 93, Issue 10, 2008, Pages

  Afanas'ev, V V ^a   Stesmans, A ^a   Mavrou, G ^b   Dimoulas, A ^b  

^a UNIVERSITY OF LEUVEN   (Belgium)

^b INSTITUTE OF MATERIALS SCIENCE   (Greece)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMS; CHEMICAL MODIFICATION; LANTHANUM; PASSIVATION; ZIRCONIUM;

ATOMIC BEAM DEPOSITION; BAND OFFSETS; ELECTRON ENERGY BANDS; INSULATOR STRUCTURES; VALENCE BANDS;

GERMANIUM;

EID: 51749113091     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2972123     Document Type: Article

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