Effects of AlGaN back barrier on AlN/GaN-on-silicon high-electron-mobility transistors

Applied Physics Express

Volumn 4, Issue 12, 2011, Pages

  Medjdoub, Farid ^a   Zegaoui, Malek ^a   Grimbert, Bertrand ^a   Rolland, Nathalie ^a   Rolland, Paul Alain ^a  

^a INSTITUT D ELECTRONIQUE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN; ALN; DC PERFORMANCE; DOUBLE HETEROSTRUCTURES; DRAIN LEAKAGE CURRENT; HIGH ASPECT RATIO; HIGH CURRENT DENSITIES; HIGH-VOLTAGE OPERATION; LOW-LEAKAGE CURRENT; RF PERFORMANCE; SHORT-CHANNEL EFFECT; SI SUBSTRATES; SUBTHRESHOLD;

ASPECT RATIO; DRAIN CURRENT; LEAKAGE CURRENTS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 83455228383     PISSN: 18820778     EISSN: 18820786     Source Type: Journal    
DOI: 10.1143/APEX.4.124101     Document Type: Article

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