Monolithic integration of enhancement- and depletion-mode AlN/GaN/AlGaN DHFETs by selective MBE regrowth

IEEE Transactions on Electron Devices

Volumn 58, Issue 4, 2011, Pages 1063-1067

  Brown, D F ^a   Shinohara, K ^a   Williams, A ^a   Milosavljevic, I ^a   Grabar, R ^a   Hashimoto, P ^a   Willadsen, P J ^a   Schmitz, A ^a   Corrion, A L ^a   Kim, S ^a   Regan, D ^a   Butler, C M ^a   Burnham, S D ^a   Micovic, M ^a  

^a Hughes Aircraft Co   (United States)

Author keywords

AlN GaN; depletion mode (D mode); enhancement mode (E mode); heterojunction field effect transistor (HFET); monolithic integration

Indexed keywords

ALN BARRIERS; ALN/GAN; BASELINE PROCESS; DEPLETION MODES; DEVICE STRUCTURES; DIRECT-CURRENT; DOUBLE-HETEROJUNCTION; ENHANCEMENT MODE (E-MODE); ENHANCEMENT-MODE; GATE LENGTH; III-NITRIDE; MBE GROWTH; MONOLITHIC INTEGRATION; NITRIDE MATERIALS; PEAK TRANSCONDUCTANCE; POWER GAINS; RADIO FREQUENCIES; REGROWTH TECHNIQUE; SIC SUBSTRATES;

CHOPPERS (CIRCUITS); CUTOFF FREQUENCY; ELECTRIC SWITCHGEAR; EQUIPMENT; HETEROJUNCTIONS; HIGH ELECTRON MOBILITY TRANSISTORS; INTEGRATION; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; MONOLITHIC INTEGRATED CIRCUITS; NITRIDES; SILICON CARBIDE;

FIELD EFFECT TRANSISTORS;

EID: 79953090392     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2011.2105268     Document Type: Article

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