N-polar GaN-based highly scaled self-aligned MIS-HEMTs with state-of-the-art fT.LG product of 16.8 GHz-μm

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2009, Pages

  Dasgupta, Nidhi Sanspatak ^a   Brown, David F ^a   Keller, Stacia ^a   Speck, James S ^a   Mishra, Umesh K ^a  

^a University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

LOW BANDGAP; SELF-ALIGNED; TRANSFER CHARACTERISTICS;

ELECTRON DEVICES; GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS;

GALLIUM ALLOYS;

EID: 77952356610     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2009.5424313     Document Type: Conference Paper

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3. Nidhi, S. Dasgupta, M. H. Wong et al., Electron Materials Conf., Pennsylvania State University, PA, 2009.
4. M. J. W. Rodwell, U. Singisetti, M. A. Wistey et. al., IEEE Conf. on Indium Phosphide and Related Materials, Versailles, France, 2008.
5. U. Singisetti, M. Wistey, G. Burek et al., Physica Status Solidi (C) 6, 1394 (2009).