InAlN/GaN HEMTs on sapphire substrate with 2.9-w/mm output power density at 18 GHz

IEEE Electron Device Letters

Volumn 32, Issue 11, 2011, Pages 1537-1539

  Lecourt, F ^a   Ketteniss, N ^a   Behmenburg, H ^b   Defrance, N ^a   Hoel, V ^a   Eickelkamp, M ^b   Vescan, A ^b   Giesen, C ^c   Heuken, M ^c   De Jaeger, J C ^a  

^a UNIV LILLE   (France)

^b RWTH AACHEN UNIVERSITY   (Germany)

^c AIXTRON AG   (Germany)

Author keywords

High electron mobility transistor (HEMT); InAlN AlN GaN; Millimeter wave transistor; Power density

Indexed keywords

120 GHZ; BEST VALUE; CONTINUOUS WAVES; CURRENT GAIN CUTOFF FREQUENCY; INALN/ALN/GAN; LARGE-SIGNALS; MILLIMETER-WAVE TRANSISTOR; OUTPUT POWER DENSITY; PEAK EXTRINSIC TRANSCONDUCTANCE; POWER DENSITIES; POWER GAIN CUTOFF FREQUENCIES; POWER GAINS; POWER-ADDED EFFICIENCY; SAPPHIRE SUBSTRATES; T-SHAPED GATE;

CUTOFF FREQUENCY; DC POWER TRANSMISSION; SAPPHIRE; SEMICONDUCTING ALUMINUM COMPOUNDS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 80054981257     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2011.2166949     Document Type: Article

References (11)

1. M. Micovic, A. Kurdoghlian, P. Hashimoto, M. Hu, M. Antcliffe, pp. J. Willadsen, W. S. Wong, R. Bowen, I. Milosavljevic, A. Schmitz, M.Wetzel, and D. H. Chow, "GaN HFET forW-band power applications," in IEDM Tech. Dig., 2006, pp. 1-3.
2. J. C. De Jaeger, S. L. Delage, G. Dambrine, M. A. Di Forte Poisson, V. Hoel, S. Lepilliet, B. Grimbert, E. Morvan, Y. Mancuso, G. Gauthier, A. Lefrancois, and Y. Cordier, "Noise assessment of AlGaN/GaN HEMTs on Si or SiC substrates: Application to X-band low noise amplifiers," in Proc. EGAAS, Oct. 3-4, 2005, pp. 229-232.
3. T. Palacios, A. Chakraborty, S. Rajan, C. Poblenz, S. Keller, S. P. DenBaars, J. S. Speck, and U. K. Mishra, "High-power AlGaN/GaN HEMTs for Ka-band applications," IEEE Electron Device Lett., vol. 26, no. 11, pp. 781-783, Nov. 2005. (Pubitemid 41622519)
4. J. W. Chung, W. E. Hoke, E. M. Chumbes, and T. Palacios, "AlGaN/GaN HEMT with 300-GHz fmax," IEEE Electron Device Lett., vol. 31, no. 3, pp. 195-197, Mar. 2010.
5. H. Behmenburg, L. Rahimzadeh Khoshroo, M. Eickelkamp, C. Mauder, M. Fieger, N. Ketteniss, J. Woitok, D. Wamwangi, M. Wuttig, M. Heuken, A. Vescan, H. Kalisch, and R. H. Jansen, "Influence of barrier thickness on AlInN/AlN/GaN heterostructure and device properties," Phys. Stat. Sol. (C), vol. 6, no. S2, P. S1 041-S1 044, Jun. 2009.
6. N. Sarazin, E. Morvan, M. A. di Forte Poisson, M. Oualli, C. Gaquière, O. Jardel, O. Drisse,M. Tordjman, M. Magis, and S. Delage, "AlInN/AlN/GaN HEMT technology on SiC with 10-W/mm and 50% PAE at 10 GHz," IEEE Electron Device Lett., vol. 31, no. 1, pp. 11-13, Jan. 2010.
7. A. Crespo, M. M. Bellot, K. D. Chabak, J. K. Gillepsie, G. H. Jessen, V. Miller, M. Trejo, G. D. Via, D. E. Walker, Jr., B. W. Winningham, H. E. Smith, T. A. Cooper, X. Gao, and S. Guo, "High-power Kaband performance of AlInN/GaN HEMT with 9.8-nm-thin-barrier," IEEE Electron Device Lett., vol. 31, no. 1, pp. 2-4, Jan. 2010.
8. H. Sun, A. R. Alt, H. Benedickter, C. R. Bolognesi, E. Feltin, J. F. Carlin, M. Gonschorek, N. Grandjean, T. Maier, and R. Quay, "102-GHz AlInN/GaN HEMTs on silicon with 2.5-W/mm output power at 10 GHz," IEEE Electron Device Lett., vol. 30, no. 8, pp. 796-798, Aug. 2009.
9. C. Gaquiere, F. Medjdoub, J. F. Carlin, S. Vandenbrouck, E. Delos, E. Feltin, N. Grandjean, and E. Kohn, "AlInN/GaN a suitable HEMT device for extremely high power high frequency applications," in Proc. IEEE/MTT-S Int. Microw. Symp., Jun. 3-8, 2007, pp. 2145-2148. (Pubitemid 47486434)
10. F. Lecourt, N. Ketteniss, H. Behmenburg, N. Defrance, V. Hoel, M. Eickelkamp, A. Vescan, C. Giesen, M. Heuken, and J.-C. De Jaeger, "RF performance of InAlN/AlN/GaN HEMTs on sapphire substrate," Electron. Lett., vol. 47, no. 3, pp. 212-214, Feb. 2011.
11. X. Tang, M. Rousseau, N. Defrance, V. Hoel, A. Soltani, R. Langer, and J.-C. De Jaeger, "Thermal behavior analysis of GaN based epi-material on different substrates by means of a physical-thermal model," Phys. Stat. Sol. (A), vol. 207, no. 8, pp. 1820-1826, Aug. 2010.