InGaN-GaN nanorod light emitting arrays fabricated by silica nanomasks

IEEE Journal of Quantum Electronics

Volumn 44, Issue 5, 2008, Pages 468-472

  Hsieh, Min Yann ^a   Wang, Cheng Yin ^a   Chen, Liang Yi ^a   Ke, Min Yung ^a   Huang, JianJang ^a  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

Author keywords

Light emitting diode (LED); Nanorod; Silica nanomask

Indexed keywords

CURRENT-VOLTAGE CURVES; DISCRETE DENSITIES; ETCH MASKS; GAN NANORODS; LIGHT EMITTING DIODE ARRAYS; LIGHT-EMITTING ARRAYS; LIGHT-EMITTING DEVICES; LIGHT-EMITTING DIODE (LED); LOW TEMPERATURES; MULTIPLE QUANTUM WELLS; NANO-MASKS; P TYPES; PHOTOLUMINESCENCE SPECTRUM; PLANARIZATION; PRACTICAL PROCESS; SILICA NANOPARTICLES;

CURRENT DENSITY; DIODES; GALLIUM ALLOYS; GALLIUM NITRIDE; LIGHT EMISSION; LIGHT EMITTING DIODES; PHYSICAL OPTICS; PLASMA ETCHING; SEMICONDUCTING GALLIUM; SEMICONDUCTOR QUANTUM WELLS; SILICA;

NANORODS;

EID: 64349093961     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/JQE.2007.916665     Document Type: Article

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