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Journal of Applied Physics

Volumn 111, Issue 9, 2012, Pages

Efficiency enhancement of blue InGaN/GaN light-emitting diodes with an AlGaN-GaN-AlGaN electron blocking layer

(7) Xia, Chang Sheng a Li, Z M Simon a Lu, Wei b Zhang, Zhi Hua c Sheng, Yang a Hu, Wei Da b Cheng, Li Wen b

a Building JieDi (China)

b SHANGHAI INSTITUTE OF TECHNICAL PHYSICS (China)

c Tongji University (China)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN; EFFICIENCY ENHANCEMENT; ELECTRON BLOCKING LAYER; ELECTRON CONFINEMENT; HIGH CURRENTS; HOLE INJECTION; INGAN/GAN; OUTPUT POWER; P-TYPE; TUNNELING EFFECTS;

GALLIUM NITRIDE; PLASMA CONFINEMENT; SEMICONDUCTOR QUANTUM WELLS;

LIGHT EMITTING DIODES;

EID: 84864189490 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.4709450 Document Type: Article

Times cited : (54)

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