Effect of silicon doped quantum barriers on nitride-based light emitting diodes

Journal of the Electrochemical Society

Volumn 158, Issue 8, 2011, Pages

  Chiang, T H ^a   Chiou, Y Z ^b   Chang, S J ^a   Lin, T K ^c   Chang, S P ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b SOUTHERN TAIWAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

^c EPISTAR CORPORATION   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

BARRIER LAYERS; ELEVATED TEMPERATURE; HOLE CONFINEMENT; INGAN/GAN; LIGHT INTENSITY; LIGHT OUTPUT POWER; QUANTUM BARRIERS; SILICON DOPING;

ELECTROSTATIC DEVICES; ELECTROSTATIC DISCHARGE; GALLIUM NITRIDE; LIGHT EMISSION; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS;

LIGHT EMITTING DIODES;

EID: 80051775834     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.3603970     Document Type: Article

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