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Volumn 5, Issue 6, 2012, Pages 7601-7605

Broadband and wide angle antireflection of sub-20 nm GaAs nanograss

(7) Ravipati, Srikanth a Shieh, Jiann b Ko, Fu Hsiang a Yu, Chen Chieh c Chen, Hsuen Li c Wu, Chia Tien a Chen, Szu Hung d

a NATIONAL CHIAO TUNG UNIVERSITY (Taiwan)

b NATIONAL UNITED UNIVERSITY (Taiwan)

c NATIONAL TAIWAN UNIVERSITY (Taiwan)

d NATIONAL NANO DEVICE LABORATORIES (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ENERGY GAP; LIGHT ABSORPTION; LIGHT POLARIZATION; OPTOELECTRONIC DEVICES; PLASMA ETCHING; SEMICONDUCTING GALLIUM; SENSITIVITY ANALYSIS;

ANTI-REFLECTION; ANTIREFLECTIVE; BROADBAND AND WIDE ANGLE; BROADBAND ANTIREFLECTION; DEVICE PERFORMANCE; ENHANCED ABSORPTION; GAAS; GAAS SUBSTRATES; GRADED REFRACTIVE INDICES; INCIDENT ANGLES; INCIDENT ENERGY; MASK LESS; NANOGRASS; TRANSVERSE ELECTRIC POLARIZED LIGHTS; TRANSVERSE-MAGNETIC POLARIZED LIGHTS;

GALLIUM ARSENIDE;

ABSORPTION; ARSENIC; DIAMETER; ELECTRONIC EQUIPMENT; GALLIUM; NANOTECHNOLOGY; PERFORMANCE ASSESSMENT; PHOTOVOLTAIC SYSTEM; POLARIZATION; REFLECTIVITY; SOLAR POWER; SUBSTRATE;

EID: 84864187176 PISSN: 17545692 EISSN: 17545706 Source Type: Journal
DOI: 10.1039/c2ee21558f Document Type: Article

Times cited : (29)

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