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Volumn 16, Issue 4, 2008, Pages 289-295

GaAs converters for high power densities of laser illumination

Author keywords

Concentrator cells; III V semiconductors; Laser power converters

Indexed keywords

ANTIREFLECTION COATINGS; CLADDING (COATING); DC GENERATORS; GALLIUM ALLOYS; LASER BEAMS; METALLIZING; METALS; MONOCHROMATORS; POWER CONVERTERS; PULSED LASER DEPOSITION; SEMICONDUCTING GALLIUM;

EID: 46749087971     PISSN: 10627995     EISSN: 1099159X     Source Type: Journal    
DOI: 10.1002/pip.811     Document Type: Article
Times cited : (126)

References (14)
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    • Letay, G.1    Bett, A.W.2
  • 2
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    • GaAs converter for high power laser diode
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    • Fave A, Kaminski A, Gavard M. GaAs converter for high power laser diode. Proceedings of 25th PVSC, 1996; Washington, D.C., USA; 101-104.
    • (1996) Proceedings of 25th PVSC , pp. 101-104
    • Fave, A.1    Kaminski, A.2    Gavard, M.3
  • 7
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    • GaAs- and InAlGaAs-based concentrator-type cells for conversion of power transmitted by optical fibers
    • Washington, D.C, USA;
    • Fahrenbruch AL, Lopez-Otero A. GaAs- and InAlGaAs-based concentrator-type cells for conversion of power transmitted by optical fibers. Proceedings of the 26th IEEE Photovoltaic Specialists Conference, 1996; Washington, D.C., USA; 117-120.
    • (1996) Proceedings of the 26th IEEE Photovoltaic Specialists Conference , pp. 117-120
    • Fahrenbruch, A.L.1    Lopez-Otero, A.2
  • 10
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    • 7th edition. Cambridge University Press: Cambridge, UK
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    • (2002) Principles of Optics
    • Born, M.1    Wolf, E.2
  • 12
    • 0000576277 scopus 로고
    • Photoluminescence characterization of nonradiative recombination in carbon-doped GaAs
    • Calderón L, Lu Y. Photoluminescence characterization of nonradiative recombination in carbon-doped GaAs. Applied Physics Letters 1992; 60(13): 1597-1599.
    • (1992) Applied Physics Letters , vol.60 , Issue.13 , pp. 1597-1599
    • Calderón, L.1    Lu, Y.2
  • 13
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    • 1-xAs Layers for AlGaAs/GaAs Interband Tunneling Devices. Journal of Electronic Materials 2000; 29(1): 47-52.
    • 1-xAs Layers for AlGaAs/GaAs Interband Tunneling Devices. Journal of Electronic Materials 2000; 29(1): 47-52.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.