A GaAs solar cell with an efficiency of 26.2% at 1000 suns and 25.0% at 2000 suns

IEEE Transactions on Electron Devices

Volumn 48, Issue 5, 2001, Pages 840-844

  Algora, Carlos ^a,b   Ortiz, Estíbaliz ^b   Rey Stolle, Ignacio ^b   Díaz, Vicente ^b   Peña, Rafael ^b   Andreev, Viacheslav M ^c   Khvostikov, Vladimir P ^c   Rumyantsev, Valeri D ^c  

^a IEEE   (Spain)

^b UNIVERSIDAD POLITÉCNICA DE MADRID   (Spain)

^c IOFFE INSTITUTE   (Russian Federation)

Author keywords

Gallium arsenide; Photovoltaic cell fabrication; Photovoltaic cell measurement; Photovoltaic cells

Indexed keywords

CONTACT RESISTANCE; PHOTOVOLTAIC CELL MEASUREMENT; SHORT-CIRCUIT CURRENT DENSITY;

CURRENT DENSITY; EFFICIENCY; ELECTRIC CONTACTS; ELECTRIC RESISTANCE; ELECTRIC VARIABLES MEASUREMENT; ELECTRON DEVICE TESTING; LIQUID PHASE EPITAXY; LOW TEMPERATURE EFFECTS; PHOTOVOLTAIC CELLS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR GROWTH;

SOLAR CELLS;

EID: 0035341007     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.918225     Document Type: Article

References (18)