SCOPUS 정보 검색 플랫폼

Volumn 20, Issue 4, 2008, Pages 801-804

Light-extraction enhancement of GaInN light-emitting diodes by graded-refractive-index indium tin oxide anti-reflection contact

(9) Kim, Jong Kyu a Chhajed, Sameer a Schubert, Martin F a Schubert, E Fred a Fischer, Arthur J b Crawford, Mary H b Cho, Jaehee c Kim, Hyunsoo c Sone, Cheolsoo c

a Rensselaer Polytechnic Institute (United States)

b SANDIA NATIONAL LABORATORIES (United States)

c Samsung Electro Mechanics (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTROMAGNETIC WAVES; FILM GROWTH; LIGHT EMISSION; LIGHT EMITTING DIODES; LIGHT REFLECTION; LIGHT REFRACTION; MATERIALS PROPERTIES; OPTICAL PROPERTIES; REFLECTION; REFRACTIVE INDEX; REFRACTOMETERS; SEMICONDUCTOR DIODES; SURFACE DIFFUSION; THICK FILMS; THIN FILM DEVICES; THIN FILMS; TIN; TITANIUM COMPOUNDS;

DEPOSITION PROCESSES; EXTRACTION EFFICIENCIES; FILM MATERIALS; FRESNEL REFLECTIONS; FUNDAMENTAL LIMITATIONS; INDIUM-TIN-OXIDE; LOW REFRACTIVE INDICES; POROUS THIN FILMS; SEMICONDUCTOR LAYERS; SHADOWING EFFECTS;

EXTRACTION;

EID: 52649176750 PISSN: 09359648 EISSN: None Source Type: Journal
DOI: 10.1002/adma.200701015 Document Type: Article

Times cited : (295)

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