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Volumn 29, Issue 2, 2011, Pages

Fabrication of cone-shaped subwavelength structures by utilizing a confined convective self-assembly technique and inductively coupled-plasma reactive-ion etching

Author keywords

[No Author keywords available]

Indexed keywords

ASPECT RATIO; FABRICATION; GALLIUM ARSENIDE; III-V SEMICONDUCTORS; REACTIVE ION ETCHING; REFLECTION; SELF ASSEMBLY; SEMICONDUCTING GALLIUM;

EID: 79953801630     PISSN: 21662746     EISSN: 21662754     Source Type: Journal    
DOI: 10.1116/1.3556962     Document Type: Article
Times cited : (12)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.