Theoretical conversion efficiency of a two-junction III-V nanowire on Si solar cell

Journal of Applied Physics

Volumn 110, Issue 1, 2011, Pages

  Lapierre, R R ^a  

^a MCMASTER UNIVERSITY   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

BAND GAPS; HIGH-EFFICIENCY SOLAR CELLS; J-V CHARACTERISTICS; LATTICE RELAXATION; LATTICE-MATCHED; LATTICE-MISMATCHED; MATERIAL GROWTH; PHOTOCONVERSION EFFICIENCY; SI SOLAR CELLS; SI SUBSTRATES; SURFACE PASSIVATION; SURFACE RECOMBINATION VELOCITIES; SURFACE TRAP DENSITY; TRIPLE-JUNCTIONS;

CONVERSION EFFICIENCY; ENERGY GAP; NANOSTRUCTURED MATERIALS; NANOWIRES; PASSIVATION; POISSON EQUATION; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SILICON; SURFACES;

EFFICIENCY;

EID: 79960530390     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3603029     Document Type: Article

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