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Journal of Crystal Growth

Volumn 355, Issue 1, 2012, Pages 59-62

MOVPE growth of semipolar (11 2 ̄ 2) AlN on m-plane (10 1 ̄ 0) sapphire

(6) Stellmach, J a Frentrup, M a Mehnke, F a Pristovsek, M a Wernicke, T a Kneissl, M a

a TECHNISCHE UNIVERSITÄT BERLIN (Germany)

Author keywords

A3. Metalorganic vapor phase epitaxy; B1. Nitrides; B2. AlN; B2. Semiconducting aluminium compounds

Indexed keywords

ABSORPTION EDGES; ALN; CRACK-FREE SURFACES; GASPHASE; HIGH-TEMPERATURE NITRIDATION; IN-PLANE RELATIONSHIP; LOWER ENERGIES; M-PLANE; METAL-ORGANIC VAPOR PHASE EPITAXY; MOVPE GROWTH; REACTOR PRESSURES; SEMIPOLAR; SINGLE PHASE; TRANSMISSION SPECTROSCOPY; V/III RATIO; XRD;

CRYSTALLOGRAPHY; EPITAXIAL GROWTH; GALLIUM NITRIDE; METALLORGANIC VAPOR PHASE EPITAXY; SAPPHIRE; VAPORS;

ALUMINUM NITRIDE;

EID: 84864066739 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2012.06.047 Document Type: Article

Times cited : (47)

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