Molecular beam epitaxy of semipolar AlN(1122) and GaN(1122) on m-sapphire

Journal of Materials Science: Materials in Electronics

Volumn 19, Issue 8-9, 2008, Pages 805-809

  Lahourcade, Lise ^a   Bellet Amalric, Edith ^a   Monroy, Eva ^a   Chauvat, Marie Pierre ^b   Ruterana, Pierre ^b  

^a CEA GRENOBLE   (France)

^b CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL ORIENTATION; DESORPTION; GALLIUM ALLOYS; INCLUSIONS; METALLIC FILMS; MOLECULAR BEAM EPITAXY; MONOLAYERS;

NITROGEN-RICH CONDITIONS; PLASMA-ASSISTED MOLECULAR-BEAM EPITAXY;

ALUMINUM ALLOYS;

EID: 44149084658     PISSN: 09574522     EISSN: 1573482X     Source Type: Journal    
DOI: 10.1007/s10854-007-9453-8     Document Type: Conference Paper

References (8)

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