Spin diode based on Fe/MgO double tunnel junction

Nano Letters

Volumn 8, Issue 3, 2008, Pages 806-809

  Iovan, A ^a   Andersson, S ^a   Naidyuk, Yu G ^a,d   Vedyaev, A ^b   Dieny, B ^c   Korenivski, V ^a  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

^b MOSCOW STATE UNIVERSITY   (Russian Federation)

^c CEA GRENOBLE   (France)

^d B VERKIN INSTITUTE FOR LOW TEMPERATURE PHYSICS AND ENGINEERING   (Ukraine)

Author keywords

[No Author keywords available]

Indexed keywords

DIODES; ELECTRIC RESISTANCE; MAGNETIC FIELD EFFECTS; MAGNETORESISTANCE; SEMICONDUCTOR DIODES; SPIN DYNAMICS; TUNNEL JUNCTIONS; TUNNELS;

DIODE EFFECTS; DISCRETE STATE; DOUBLE TUNNEL JUNCTIONS; FERROMAGNETIC LAYERS; LOGIC APPLICATIONS; NANO-SCALE; NEW DEVICES; REPROGRAMMABLE; SPIN DIODES; SPIN-VALVE EFFECTS; TUNNEL BARRIERS;

SEMICONDUCTOR JUNCTIONS;

EID: 61449211124     PISSN: 15306984     EISSN: None     Source Type: Journal    
DOI: 10.1021/nl072676z     Document Type: Article

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