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Volumn 100, Issue PART 4, 2008, Pages
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Photoemission studies of the interface formation of ultrathin MgO dielectric layers on the oxidised Si(111) surface
a
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Author keywords
[No Author keywords available]
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Indexed keywords
BINDING ENERGY;
BINS;
CONDUCTION BANDS;
DEPOSITION;
DIELECTRIC FILMS;
ELECTRON AFFINITY;
ENERGY GAP;
HETEROJUNCTIONS;
INTERFACES (MATERIALS);
LEAKAGE CURRENTS;
MAGNESIA;
MAGNESIUM;
PHOTOEMISSION;
SILICON OXIDES;
SUBSTRATES;
SYNCHROTRON RADIATION;
ULTRATHIN FILMS;
VALENCE BANDS;
X RAY PHOTOELECTRON SPECTROSCOPY;
NANOSCIENCE;
OXIDE MINERALS;
VACUUM APPLICATIONS;
X RAYS;
CONDUCTION BAND OFFSET;
DEPOSITION SEQUENCES;
OXYGEN PARTIAL PRESSURE;
SATURATION THICKNESS;
SILICON OXIDE LAYERS;
SUBMONOLAYER DEPOSITION;
THIN DIELECTRIC FILM;
VALENCE BAND OFFSETS;
DIELECTRIC MATERIALS;
SILICON COMPOUNDS;
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EID: 77954332220
PISSN: 17426588
EISSN: 17426596
Source Type: Conference Proceeding
DOI: 10.1088/1742-6596/100/4/042047 Document Type: Conference Paper |
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Times cited : (23)
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References (3)
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