Complementary metal oxide semiconductor integration of epitaxial Gd2 O3

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 27, Issue 1, 2009, Pages 258-261

  Lemme, M C ^a,d   Gottlob, H D B ^a   Echtermeyer, T J ^a   Schmidt, M ^a   Kurz, H ^a   Endres, R ^b   Schwalke, U ^b   Czernohorkky, M ^c   Tetzlaff, D ^c   Osten, H J ^c  

^a AMO GMBH   (Germany)

^b DARMSTADT UNIVERSITY OF TECHNOLOGY   (Germany)

^c LEIBNIZ UNIVERSITY HANNOVER   (Germany)

^d HARVARD UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING CONDITIONS; COMPLEMENTARY METAL OXIDE SEMICONDUCTORS; GADOLINIUM OXIDES; GATE PROCESS; HIGH-TEMPERATURE PROCESSING; INTRINSIC PROPERTIES; LEAKAGE CURRENT DENSITIES; OXIDE THICKNESS; SUBNANOMETER; THERMALLY STABLES;

CHARGE COUPLED DEVICES; CRYSTAL GROWTH; DIELECTRIC MATERIALS; ELECTRIC CONDUCTIVITY; FIELD EFFECT TRANSISTORS; GADOLINIUM; GATES (TRANSISTOR); METALLIC COMPOUNDS; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; MOLECULAR DYNAMICS; MOS DEVICES; OZONE WATER TREATMENT; SEMICONDUCTING INDIUM; SEMICONDUCTOR MATERIALS; TRANSISTORS;

GATE DIELECTRICS;

EID: 59949096439     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.3054350     Document Type: Article

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