Scaling potential and MOSFET integration of thermally stable Gd silicate dielectrics

Microelectronic Engineering

Volumn 86, Issue 7-9, 2009, Pages 1642-1645

  Gottlob, H D B ^a   Schmidt, M ^a   Stefani, A ^a   Lemme, M C ^a   Kurz, H ^a   Mitrovic, I Z ^b   Davey, W M ^b   Hall, S ^b   Werner, M ^b   Chalker, P R ^b   Cherkaoui, K ^c   Hurley, P K ^c   Piscator, J ^d   Engstrom O ^d   Newcomb, S B ^e  

^a AMO GMBH   (Germany)

^b UNIVERSITY OF LIVERPOOL   (United Kingdom)

^c UNIVERSITY COLLEGE CORK   (Ireland)

^d CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

^e Glebe Scientific Ltd   (Ireland)

Author keywords

Gate first integration; High k dielectric; Rare earth silicate; Silicate formation

Indexed keywords

GADOLINIUM OXIDE; GADOLINIUM SILICATE; GATE FIRST; GATE FIRST INTEGRATION; GATE LEAKAGE CURRENT DENSITY; HIGH-K DIELECTRIC; HIGH-K GATE DIELECTRICS; INTEGRATION SCHEME; LOW STAND-BY POWER; MATERIAL ANALYSIS; METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR; MOS-FET; RARE EARTH SILICATE; SILICATE FORMATION; SILICON-ON-INSULATOR; THERMALLY STABLE;

CHARGE COUPLED DEVICES; DIELECTRIC MATERIALS; GADOLINIUM; GATE DIELECTRICS; GATES (TRANSISTOR); METALLIC COMPOUNDS; MOS DEVICES; MOSFET DEVICES; RARE EARTHS; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SILICATES; SILICON OXIDES; THERMODYNAMIC STABILITY;

FIELD EFFECT TRANSISTORS;

EID: 67349133216     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2009.03.084     Document Type: Article

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