Effect of m-plane GaN substrate miscut on InGaN/GaN quantum well growth

Journal of Crystal Growth

Volumn 312, Issue 7, 2010, Pages 902-905

  Lai, K Y ^a   Paskova, T ^a,b   Wheeler, V D ^a   Grenko, J A ^a   Johnson, M A L ^a   Udwary, K ^b   Preble, E A ^b   Evans, K R ^b  

^a North Carolina State University   (United States)

^b KYMA TECHNOLOGIES INC   (United States)

Author keywords

A3. Metalorganic chemical vapor deposition; B1. Nitrides; B2. Semiconducting III V materials; B3. Light emitting diodes

Indexed keywords

A3. METALORGANIC CHEMICAL VAPOR DEPOSITION; B2. SEMICONDUCTING III-V MATERIALS; GAN SUBSTRATE; INGAN/GAN QUANTUM WELL; M-PLANE; SEMI CONDUCTING III-V MATERIALS; WAVELENGTH EMISSION;

GALLIUM NITRIDE; LIGHT EMISSION; LIGHT EMITTING DIODES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS; SUBSTRATES; SULFUR COMPOUNDS; SURFACE ROUGHNESS;

GALLIUM ALLOYS;

EID: 77249162623     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2010.01.020     Document Type: Article

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