Diffusion of in atoms in InGaN ultra-thin films during post-growth thermal annealing by high-resolution Rutherford back-scattering spectrometry

Physica Status Solidi C: Conferences

Volumn 2, Issue 7, 2005, Pages 2407-2410

  Sakuta, H ^a   Kawano, Y ^a   Yamanaka, Y ^a   Kurai, S ^a   Taguchi, T ^a  

^a YAMAGUCHI UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BACKSCATTERING; INDIUM COMPOUNDS; MOLECULAR BEAM EPITAXY; SIGNAL PROCESSING;

POST-GROWTH THERMAL ANNEALING; RUTHERFORD BACK-SCATTERING SPECTROMETRY;

THIN FILMS;

EID: 27344452166     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200461296     Document Type: Conference Paper

References (6)

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6. H. Sakuta, Y.Yamanaka, S. Kurai, and T. Taguchi, to be published in Proceedings of IISC-15 (2004).