Effects of off-axis GaN substrates on optical properties of m-plane InGaN/GaN light-emitting diodes

Journal of Crystal Growth

Volumn 310, Issue 23, 2008, Pages 4968-4971

  Yamada, Hisashi ^a   Iso, Kenji ^a   Masui, Hisashi ^a   Saito, Makoto ^a   Fujito, Kenji ^b   DenBaars, Steven P ^a   Nakamura, Shuji ^a  

^a University of California   (United States)

^b MITSUBISHI CHEMICAL CORPORATION   (Japan)

Author keywords

A1. Crystal morphology; A3. Metalorganic chemical vapor deposition; B1. Nitrides; B3. Light emitting diode

Indexed keywords

DIODES; GALLIUM ALLOYS; GALLIUM NITRIDE; LIGHT EMISSION; LIGHT EMITTING DIODES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; METALLORGANIC VAPOR PHASE EPITAXY; NITRIDES; OPTICAL PROPERTIES; ORGANIC CHEMICALS; ORGANIC COMPOUNDS; ORGANIC LIGHT EMITTING DIODES (OLED); ORGANOMETALLICS; SEMICONDUCTING GALLIUM; VAPORS;

A1. CRYSTAL MORPHOLOGY; A3. METALORGANIC CHEMICAL VAPOR DEPOSITION; B1. NITRIDES; B3. LIGHT EMITTING DIODE; DC CURRENTS; GAN SUBSTRATES; INGAN/GAN; INGAN/GAN QUANTUM WELLS; LIGHT EMITTING DIODE LEDS; M PLANES; METAL ORGANIC; NONPOLAR MATERIALS; OPTICAL POLARIZATIONS; PEAK WAVELENGTHS;

SUBSTRATES;

EID: 56249120207     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2008.06.079     Document Type: Article

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