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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 45, Issue 4 A, 2006, Pages 2509-2513

Anisotropically biaxial strain in a-plane AlGaN on GaN grown on r-plane sapphire

(7) Tsuda, Michinobu a,b Furukawa, Hiroko b Honshio, Akira b Iwaya, Motoaki b Kamiyama, Satoshi b Amano, Hiroshi b Akasaki, Isamu b

a KYOCERA CORPORATION (Japan)

b MEIJO UNIVERSITY (Japan)

Author keywords

a plane; AlGaN; Biaxial strain; r plane sapphire; Reciprocal lattice space mapping

Indexed keywords

ANISOTROPY; GALLIUM NITRIDE; LATTICE CONSTANTS; SAPPHIRE; TENSILE STRESS; X RAY DIFFRACTION;

A-PLANE; ALGAN; BIAXIAL STRAIN; R-PLANE SAPPHIRE; RECIPROCAL LATTICE SPACE MAPPING;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 33645698588 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.45.2509 Document Type: Article

Times cited : (25)

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