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Volumn 11, Issue 12, 2011, Pages 5252-5258

Fabrication of n-type mesoporous silicon nanowires by one-step etching

Author keywords

mesoporous; metal assisted chemical etching (MACE); photoluminescence (PL); Silicon nanowires (SiNWs)

Indexed keywords

ELECTRICAL RESISTIVITY; INTRINSIC PROPERTY; MESOPOROUS; MESOPOROUS SILICON; MESOPOROUS STRUCTURES; METAL-ASSISTED CHEMICAL ETCHING; RED LIGHT; ROOM TEMPERATURE; SILICON NANOWIRES (SINWS); TEMPERATURE DEPENDENT;

EID: 83655164364     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl202674t     Document Type: Article
Times cited : (101)

References (40)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.